等离子体聚合四丁基锡薄膜的制备和结构

研究了Ａｒ和Ａｒ／Ｏ＿２混合气携带四丁基锡的等离子体聚合规律和膜的组成、结构，分别得到低碳氢含量的金属Ｓｎ和ＳｎＯ＿ｘ共混膜。     

基于紧凑拉伸剪切结构的复合型疲劳裂纹扩展研究

针对含I-II型复合裂纹的紧凑拉伸剪切(CTS)试样,研究了不同加载角度下的裂纹扩展路径及裂纹扩展寿命,通过实验数据给出了适宜于CTS试样的等效应力强度因子关系式,并基于此提出了一种新的I-II型复合裂纹扩展模型。研究表明,CTS试样的裂纹沿与加载方向近垂直的方向扩展,基于Tanaka公式的等效应力强度因子更适合于本文CTS试件的裂纹扩展寿命评估。当加载角度处于0°~45°之间时,提出的复合型裂纹扩展模型预测误差控制在5.49%之内,验证了分析模型的可行性和准确性。     

Dynamical behaviors of Hopfield neural network with multilevel activation functions

When the activation function possesses multilevel property, the Hopfield neural network has some novel dynamical behaviors, and it is worthwhile to study. First, some properties about the activation function are obtained, on this foundation, some theoretical analysis about the quasi-equilibrium points has been made. From local and global view, some theorems about the boundedness are presented. Finally, two theorems about the first derivative of trajectory with respect to time are found, the first theorem indicates that the trajectory cannot keep increasing or decreasing for time t > t₀, the second theorem is about the complete stability of the trajectory.     

GaS multi-walled nanotubes from the lamellar precursor

Inorganic fullerene-like (IF) nanotubes constructed from layered metal chalcogenides are of particular significance because of their excellent physical properties and potential application in wide fields. But very few previous studies were focused on the IF nanotubes of layered III-VI semiconductor. Therefore we investigate the preparation, structure and photoluminescence (PL) properties of GaS nanotube (an important III-VI semiconductor IF nanotube). A simple method is introduced to prepare GaS multi-walled nanotubes for the first time by annealing the natural lamellar precursor in Ar. The reaction temperature is crucial for the formation of nanotube. A suitable temperature range is 500–850 °C. Bulk quantities of GaS nanotubes with diameters of 30–150 nm and lengths up to ten micrometers were produced. Some of these nanotubes show corrugated and interlinked structure and form many segments, demonstrating a bamboo-like structure. As compared to bulk materials, the obvious distinction of the products in PL spectra at liquid nitrogen temperature of 77 K was due to the structure variety. PACS 61.46.+w; 81.07.De; 81.16.Be     

SiO2脊形条波导热极化引起的电光效应

通过理论模拟对具有上覆盖层的SiO2脊形条波导结构进行了优化,在此基础上利用微电子工艺制作了SiO2脊形波导Mach-Zehnder 型电光调制器,并进行热极化引起的电光和非线性效应的研究.热极化过程大幅增强了样品的电光及非线性效应,二次电光系数由热极化前的1.56×10-22(m/V)2提高到热极化后的8.50×10-22(m/V)2,极化后得到了0.093pm/V的线性电光系数,对热极化的物理机理进行了理论分析.     

纳米TiO_2∶Zn薄膜电极紫外光电特性研究

采用sol-gel法制备了Zn2 掺杂的锐钛矿相纳米TiO2薄膜电极.通过光电流作用谱和电流-电位(I-U)曲线研究了掺杂不同浓度Zn2 的TiO2薄膜电极的光电特性.由光电流作用谱可知,Zn2 的掺杂可显著影响薄膜电极的光电流大小,且掺杂的最佳浓度与薄膜晶粒尺度有关.在320nm单色光照射下,掺杂浓度(摩尔浓度)为0.1%的薄膜电极光电流最大,与未掺杂的本征薄膜电极相比增幅达40%.I-U曲线表明,光照下,随电极电位由正到负逐渐降低,不同掺杂浓度的TiO2薄膜电极中均出现了阳极电流向阴极电流转换的现象,且Zn2 掺杂浓度可影响电极阳极电流的初始电位.另外,无光照的暗态下,各薄膜在负电位区域观察到了相似的随电位降低而迅速增大的阴极暗电流.     

平行排列液晶器件的波前调制特性

设计了一种新型的平行排列液晶相位调制器(LC PM)，可在纯相位的模式下进行相位调制，研究了液晶相位调制器的光学特性，理论上给予了分析．对畸变波前进行了调制，在1 cm2的校正面积上，调制后的准确度PV(peak to valley)值接近λ／15(λ=0.6328 μm)，RMS(Root Means Square)可达到λ／100，斯特列尔比SR (Strehl Ratio)达到0.989．改变了传统的扭曲向列液晶器件难于进行纯相位调制和得到高准确度调制的缺点，达到了理想的效果.     

Study on measurement of linear electro-optic coefficient of a minute irregular octahedron cBN wafer

The cubic boron nitride (cBN) is a kind of artificial electro-optic (EO) crystal, and we have not found any relative reports so far. Because the artificial synthetic cBN wafers are very small and hard, the wafers cannot be cut into rectangular slabs. The polarizer-sample-λ/4 retardation plate (compensator)-analyzer (PSCA) transverse EO modulator has to be adjusted to the minute irregular octahedron of cBN wafers. When the applied voltage is along [1 1 1] direction of the wafer, due to refraction, the angle between the incident beam direction and the (1 1 1) plane (top or bottom plane) of the wafer should be 25.4°, and the angle between the polarization direction of the polarizer and the plane of incidence should be 50.8° by calculation, respectively. The half-wave voltage of the cBN sample was obtained for the first time, by means of detection of the output optic signals from the modulator with and without an applied electric field on the sample, respectively. Furthermore, the linear EO coefficient was obtained, . The analysis of the experimental resulting error was carried out.     

Influence of a single quantum dot state on the characteristics of a microdisk laser

We report a quantum dot microcavity laser with a cw sub-microW lasing threshold, where a significant reduction of the lasing threshold is observed when a single quantum dot (QD) state is aligned with a cavity mode. The quality factor exceeds 15,000 before the system lases. When no QD states are resonant, below threshold the cavity mode initially degrades with increasing pump power, after which saturation occurs and then the cavity mode recovers. We associate the initial cavity mode spoiling with QD state broadening that occurs with increasing pump power.     

Single-frequency 1.25 W monolithic lasers at 1123 nm

Experimental investigation ofd Nd:YAG monolithic nonplanar ring lasers operated at 1123 nm wavelength is presented. Stable single-frequency 1123 nm laser output has been obtained with successful suppression of the strong 1064 nm radiation. Single-frequency output power of 1.25 W is demonstrated with a pump power of 3.98 W at 808 nm, which gives a slope efficiency of 39%. The laser frequency tuning range is over 3 GHz, and the average tuning rate with temperature is -2.6 GHz/ degrees C. A strong iodine absorption line can be covered within the laser frequency tuning range.